unisonic technologies co., ltd 2n3906 pnp epitaxial planar transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r201-028, c general purpose appliation ? features * collector-emitter voltage: v ceo =40v * collector dissipation: p c(max) =625mw * complementary to utc 2n3904 to-92 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2n3906l-t92-b 2N3906G-T92-B to-92 e b c tape box 2n3906l-t92-k 2n3906g-t92-k to-92 e b c bulk 2n3906l-t92-r 2n3906g-t92-r to-92 e b c tape reel note: pin assignment: e: emitter b: base c: collector
2n3906 pnp epitaxial planar transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r201-028, c ? absolute maximum rating ( t a =25 , unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v collector current i c -200 ma base current i b -50 ma collector dissipation p c 625 mw junction temperature t j 125 operating temperature t opr -20 ~ +85 storage temperature t stg -40 ~ +150 note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i ce x v ce =-30v, v eb =-3v -50 na base cut-off current i bl v ce =-30v, v eb =-3v -50 na collector-base breakdown voltage v cbo i c =-10 a, i e =0 -40 v collector-emitter breakdown voltage v ceo i c =-1ma, i b =0 (note) -40 v emitter-base breakdown voltage v ebo i e =-10 a, i c =0 -6 v dc current gain (note) h fe1 v ce =-1v, i c =-0.1ma 60 h fe2 v ce =-1v, i c =-1ma 80 h fe3 v ce =-1v, i c =-10ma 100 300 h fe4 v ce =-1v, i c =-50ma 60 h fe5 v ce =-1v, i c =-100ma 30 collector-emitter sa turation voltage (note) v ce ( sat ) 1 i c =-10ma, i b =-1ma -0.25 v v ce ( sat ) 2 i c =-50ma, i b =-5ma -0.4 base-emitter satu ration voltage v be ( sat ) 1 i c =-10ma, i b =-1ma -0.65 -0.85 v v be ( sat ) 2 i c =-50ma, i b =-5ma -0.95 transition voltage f t v ce =-20v, i c =-10ma, f=100mhz 250 mhz output capacitance c ob v cb =-5v, i e =0, f=1mhz 4.5 pf turn on time t on v cc =-3v, v be =-0.5v, i c =-10ma, i b1 =-1ma 70 ns turn off time t off i b1 =1 b2 =-1ma 300 ns note: pulse test: p w <=300 s, duty cycle<=2%
2n3906 pnp epitaxial planar transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r201-028, c ? typical characteristics v o l t a g e , v ( v ) v o l t a g e , v ( v ) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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